HFETs (Doped Channel) : Concept; I-V model including velocity saturation; gate 2 characteristics; output conductance; applications of strained layers.
HFETs (Doped Channel) : Concept; I-V model including velocity saturation; gate 2 characteristics; output conductance; applications of strained layers.
11异质接面场效电晶体(有掺杂的通道)：基本概念，电流-电压模型，其中包括速度饱和，闸极特性，输出电导，应变层的应用。