Considering potential configuration of a silicon nanocrystal based memory and the mixing effect of valence bands,we calculate direct tunneling time of electron and hole with sequential tunnel theory and in the Bardeen's transfer Hamiltonian formalism.
Considering potential configuration of a silicon nanocrystal based memory and the mixing effect of valence bands,we calculate direct tunneling time of electron and hole with sequential tunnel theory and in the Bardeen's transfer Hamiltonian formalism.
在分析硅基纳米存储器的势结构和价带混合效应对直接隧穿过程影响的基础上,采用顺序隧穿理论和巴丁传输哈密顿方法,发展了电子和空穴直接隧穿时间的计算模型.