We conclude that due to the competition between the surface oxide removal and the Ge deposition, GeH4-based clean is not suitable for high quality Si epitaxial growth by chemical vapor deposition techniques.
We conclude that due to the competition between the surface oxide removal and the Ge deposition, GeH4-based clean is not suitable for high quality Si epitaxial growth by chemical vapor deposition techniques.
同样，我们证实了当表面氧覆盖在一定的值以下时，在清洗之后的外延层生长不需要清洗的很好有效表征。