A photoelectron beam with sensitivity of 8 μA/mW and polarization of above % is obtained on the NEA GaAs (00) surface in the activation with caesium and oxygen.
A photoelectron beam with sensitivity of 8 μA/mW and polarization of above % is obtained on the NEA GaAs (00) surface in the activation with caesium and oxygen.
在用此法激活的NEA GaAs(00)表面上可得到灵敏度为8μA/mW,极化度约用 %以上的光电子束。