Basing on Bardeen's transfer Hamiltonian formalism,the charge storage characteristics of p-channel Ge/Si hetero-nanocrystal based MOSFET memory is simulated.
Basing on Bardeen's transfer Hamiltonian formalism,the charge storage characteristics of p-channel Ge/Si hetero-nanocrystal based MOSFET memory is simulated.
采用巴丁 (Bardeen)传输哈密顿方法 ,数值计算了 p沟道锗 /硅异质纳米结构存储器的时间特性 .