Abstract: A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices.Simulation result shows that nearly 100％ breakdown voltage of the plane junction can be realized.
Abstract: A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices.Simulation result shows that nearly 100％ breakdown voltage of the plane junction can be realized.
文摘:提出一种二氧化硅/多晶硅/二氧化硅夹心深槽场限制环新结构来提高晶体管的击穿电压.模拟结果显示,该结构可以使射频功率双极性晶体管的击穿电压几乎100％达到平行平面结的理想值.