The damage profile of silicon substrate induced by 0MeV Er + at a dose of ×0 /cm is extracted using the multiple scattering dechannelling model of Feldman,and the result is in good agreement with the TRIM9 calculation.
The damage profile of silicon substrate induced by 0MeV Er + at a dose of ×0 /cm is extracted using the multiple scattering dechannelling model of Feldman,and the result is in good agreement with the TRIM9 calculation.
采用多重散射模型计算了 Me V × 0 / cm 注入硅 (0 0 )引起的损伤分布 ,并与 TRIM9模拟得到的结果进行了比较 .