Besides, silicon substrate is bent by applying external mechanical stress, the lattice of channel will have strain due to uniaxial tensile stress by NMOS and strain due to uniaxial compressive stress by PMOS.
Besides, silicon substrate is bent by applying external mechanical stress, the lattice of channel will have strain due to uniaxial tensile stress by NMOS and strain due to uniaxial compressive stress by PMOS.
但微影技术已经接近瓶颈，所以我们必须另外寻找能够提升电晶体效能的方法，应变矽就是目前提升电晶体性能最热门的方法。