The effect of a few important geometrical and physical parameters which include the length of the active region, the thickness of the active region, bulk traps, interface traps, on the TFT (Thin Film Transistor) characteristics of polycrystalline silicon
The effect of a few important geometrical and physical parameters which include the length of the active region, the thickness of the active region, bulk traps, interface traps, on the TFT (Thin Film Transistor) characteristics of polycrystalline silicon
摘要利用高级二维器件模拟程序MEDICI分析了多晶矽薄膜晶体管有源区的长度、体内陷阱、界面陷阱、栅氧化层厚度等几何参数及物理参数，并研究了这些参数对薄膜晶体管特性的影响。