In order to get strain from the channel, by process, deposit Si3N4 at NMOS and adopt the silicon-germanium epitaxy on source/drain by PMOS, can effective improve NMOS and PMOS electronic characteristic.
In order to get strain from the channel, by process, deposit Si3N4 at NMOS and adopt the silicon-germanium epitaxy on source/drain by PMOS, can effective improve NMOS and PMOS electronic characteristic.
中文摘要近年来，为了提升金氧半场效电晶体工作频率及性能，尺寸不断微缩，让相同面积晶片可以拥有更多的电晶体数量。