The micromagnetics simulation shows that a current-induced Oersted field can lead to the deviation of magnetization from the easy magnetic direction in the free layer and it is one reason for the TMR ratios dependent on applied DC bias voltage.
The micromagnetics simulation shows that a current-induced Oersted field can lead to the deviation of magnetization from the easy magnetic direction in the free layer and it is one reason for the TMR ratios dependent on applied DC bias voltage.
果表明,奥斯特场使得自由层的磁矩偏离了易磁化方向,这是导致TMR效应依赖直流偏压的一个原因。