Based on the hydrodynamic energy transport model,the influence of variation of negative junction depth caused by concave depth on the characteristics of deep-sub-micron PMOSFET has been studied.The results are explained by the interior physical mechanism
Based on the hydrodynamic energy transport model,the influence of variation of negative junction depth caused by concave depth on the characteristics of deep-sub-micron PMOSFET has been studied.The results are explained by the interior physical mechanism
基于能量输运模型对由凹槽深度改变引起的负结深的变化对深亚微米槽栅PMOSFET性能的影响进行了分析，对所得结果从器件内部物理机制上进行了讨论，最后与由漏源结深变化导致的负结深的改变对器件特性的影响进行了对比.研究结果表明随着负结深(凹槽深度)的增大，槽栅器件的阈值电压升高，亚阈斜率退化，漏极驱动能力减弱，器件短沟道效应的抑制更为有效，抗热载流子性能的提高较大，且器件的漏极驱动能力的退化要比改变结深小.因此，改变槽深加大负结深更有利于器件性能的提高.